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november 2008 rev 1 1/15 15 stf17n62k3 STP17N62K3, stw17n62k3 n-channel 620 v, 0.34 ? , 15 a, to-220, to-220fp, to-247 supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected application switching applications description the new supermesh3? series is obtained through the combination of a further fine tuning of st's well established strip-based powermesh? layout with a new optimization of the vertical structure. in addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. figure 1. internal schematic diagram type v dss r ds(on) max i d pw stf17n62k3 620 v < 0.38 ? 15 a (1) 1. limited by package 40 w STP17N62K3 620 v < 0.38 ? 15 a 190 w stw17n62k3 620 v < 0.38 ? 15 a 190 w 1 2 3 to-247 to-220fp to-220 1 2 3 1 2 3 table 1. device summary order codes marking package packaging stf17n62k3 17n62k3 to-220fp tube STP17N62K3 17n62k3 to-220 tube stw17n62k3 17n62k3 to-247 tube www.st.com
contents stf17n62k3, STP17N62K3, stw17n62k3 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stf17n62k3, STP17N62K3, stw17n62k3 electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ds drain-source voltage (v gs = 0) 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 15 15 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 9.5 9.5 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 60 60 (1) a p tot total dissipation at t c = 25 c 190 40 w derating factor 0.72 0.2 w/c v esd(g-s) gate source esd(hbm-c = 100 pf, r = 1.5 k ?) 2500 v dv/dt (3) 3. i sd 15 a, di/dt 200 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 9 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter to-220 to-247 to-220fp unit r thj-case thermal resistance junction-case max 1.39 0.66 5 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter m ax value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 315 mj
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 4/15 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 620 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 7.5 a 0.34 0.38 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 2500 195 26 pf pf pf c oss eq (1) 1. c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v d s increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 496 v 211 pf r g intrinsic gate resistance f = 1 mhz open drain 2.7 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 15 a, v gs = 10 v (see figure 19 ) 94 6 54 nc nc nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 7.5 a, r g = 4.7 ?, v gs = 10 v (see figure 18 ) 25 26 91 63 ns ns ns ns
stf17n62k3, STP17N62K3, stw17n62k3 electrical characteristics 5/15 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 15 60 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 60 v (see figure 23 ) 312 3.2 20.5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 23 ) 382 4.4 23 ns nc a table 9. gate-source zener diode symbol parameter test conditions min typ max unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 1 ma (open drain) 30 v
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 6/15 2.1 electrical characteristics (c urves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d ( a ) 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 v d s (v) 10 s 100 s 1m s 10m s oper a tion in thi s a re a i s limited b y m a x r d s (on) am01479v1 i d ( a ) 10 1 10 0 10 -1 10 -2 10 -1 10 0 10 1 10 2 v d s (v) 10 s 100 s 1m s 10m s oper a tion in thi s a re a i s limited b y m a x r d s (on) am014 8 0v1 i d ( a ) 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 v d s (v) 10 s 100 s 1m s 10m s oper a tion in thi s a re a i s limited b y m a x r d s (on) am0149 3 v1
stf17n62k3, STP17N62K3, stw17n62k3 electrical characteristics 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations 6 $3 6 ) $ ! 6 6 6 '3 6 !-v 0 4 8 v g s (v) 0 2 4 8 12 i d (a) 14 10 26 6 10 am014 8 2v1 v (br)d ss t j (c) (norm) 0. 8 5 0.90 1.00 1.10 0.95 1.05 0 50 100 150 -50 am01490v1 0 6 12 i d (a) 0. 3 0. 3 1 0. 33 0. 3 4 r d s (on) ( ? ) 0. 3 5 14 2 8 0. 3 2 4 10 0. 3 6 0. 3 7 16 am014 8 4v1 0 40 8 0 i d (a) 0 2 6 8 v g s 10 100 20 4 60 (v) 12 v dd =496v i d =15a v g s =10v am014 8 5v1 0.1 10 v d s (v) 1 10 1000 c 1 100 100 (pf) ci ss co ss cr ss am014 8 6v1
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 8/15 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. maximum avalanche energy vs temperature v g s (th) t j (c) (norm) 0.6 0.7 0.9 1.1 0. 8 1.0 -50 0 50 100 150 am014 8 7v1 r d s (on) t j (c) (norm) 0.0 0.5 1.5 2.5 1.0 2.0 -50 0 50 100 150 am014 88 v1 6 3$ ) 3$ ! 6 !-v e a s t j (c) (mj) 20 60 140 220 100 1 8 0 260 3 40 3 00 20 40 60 8 0 0 100 120 am01491v1
stf17n62k3, STP17N62K3, stw17n62k3 test circuits 9/15 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform
package mechanical data stf17n62k3, STP17N62K3, stw17n62k3 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stf17n62k3, STP17N62K3, stw17n62k3 package mechanical data 11/15 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stf17n62k3, STP17N62K3, stw17n62k3 12/15 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.17 3 0.1 8 1 b 2.5 2.7 0.0 98 0.106 d 2.5 2.75 0.0 98 0.10 8 e 0.45 0.70 0.017 0.027 f 0.75 1.00 0.0 3 00.0 39 f1 1.15 1.50 0.045 0.067 f2 1.15 1.50 0.045 0.067 g4. 9 55.200.1 9 50.204 g1 2.40 2.70 0.0 9 4 0.106 h 10 10.40 0. 393 0.40 9 l2 16 0.6 3 0 l 3 2 8 .6 3 0.6 1.126 1.204 l4 9 . 8 0 10.60 0. 38 5 0.417 l5 2. 93 .6 0.114 0.141 l6 15. 9 0 16.40 0.626 0.645 l7 99 . 3 00. 3 54 0. 3 66 di a3 3 .2 0.11 8 0.126 to-220fp mechanical data l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 7012510-i di a
stf17n62k3, STP17N62K3, stw17n62k3 package mechanical data 13/15 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history stf17n62k3, STP17N62K3, stw17n62k3 14/15 5 revision history table 10. document revision history date revision changes 11-nov-2008 1 first release
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